For doping silicon with boron, silicon specimen was kept in gaseous atmosphere containing B2O3 that maintained the B concentration at the surface of Si specimen at the level of 3*10^26 boron atoms/m^3. The process was carried out at 1100 degrees C. The diffusion coefficient of B in Si at 1100 degrees C is 4*10^-13 cm^2/s. Calculate the concentration of B at the depth of 10^-4 cm from the surface after 130 minutes of diffusion at 1100 degrees C