Engineering, 05.09.2019 05:20 cecelia090
Asilicon dioxide film formed on the surface of a silicon wafer by thermal oxidation has a thickness that is
(a) greater than, (b) less than, or (c) the same as the layer of substrate silicon used to form it.
Answers: 3
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Asilicon dioxide film formed on the surface of a silicon wafer by thermal oxidation has a thickness...
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