In a particular semiconductor material, the effective density of states functions are given by nc nc0· (t300)32 and nv nv0· (t300)32 where nc0 and nv0 are constants independent of temperature. experimentally determined intrinsic carrier concentrations are found to be ni 1.40 102 cm3 at t 200 k and ni 7.70 1010 cm2 at t 400 k. determine the product nc0 nv0 and the bandgap energy eg. (assume eg is constant over this temperature range.)