For three p-n junction diode samples a, b, and c, acceptor and donor carrier concentrations are the same 1015/cm3 and 1018 /cm3, respectively. band gaps for the three samples a, b, and c are 0.8 ev, 1.5 ev, and 1.8 ev, while the electron and hole effective masses of density of states are the same in all the three materials, me 0.1mo and mh 0.5mo, where is the electron mass in free space. find the built-in potentials for these three devices at t = 300 k. comment on the comparison of estimated built-in potentials (b) if for material c in part (a), the n-side doping is 5 times the p-side doping, and build-in junction voltage is 0.65 v at 100°c, what is the doping on p-side? (c) if the relative dielectric constant of the material c in part (b) is 10, what is the depletion capacitance at 2 v reverse bias for a diode of cross-sectional area of 0.1 cm hint for part (a), you need first to find intrinsic carrier concentrations for materials a, b, and c. hint for part (c), a reverse biased p-n junction can be considered as parallel plate capacitor with a distance between plates equal to the depletion region width.