Engineering, 30.10.2019 03:31 shamarmosley
Estimate the pre-exponential constant for the diffusion coefficient as a part of producing mosfet transistors, a p-type silicon (si) wafer containing boron (b) dopants at a concentration of 1x1019 atoms/cm3 is being processed to create a pn junction by doping the wafer with phosphorous (p) atoms using a p-producing gas. assume that the wafer does not contain p prior to the diffusion process. the solubility of p in si at 1000°c is 1x1020 atoms/cm3. it is determined that the pn junction depth of 1 um was produced after 60 minutes at 1000°c. the activation energy for estimating the diffusion coefficient of p in si is 2.5x105 j/mole. based on this result, "estimate the pre-exponential constant for the diffusion coefficient" of p in si at 1000°cincm2/s.
Answers: 3
Engineering, 03.07.2019 14:10
If the thermal strain developed in polyimide film during deposition is given as 0.0044. assume room temperature is kept at 17.3 c, and thermal coefficient of expansion for the film and the substrate are 54 x 10^-6c^-1 and 3.3 x 10^-6c^-1respectively. calculate the deposition temperature.
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Draw the engineering stress-strain curve for (a) bcc; (b) fcc metals and mark important points.
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Engineering, 04.07.2019 18:20
Most leaks in reciprocating air compressors can be detected and minimized by: (clo4) a)-detecting leakage areas using ultrasonic acoustic detector. b)-tightening joints and connections c)-replacing faulty equipment d)-all of the given options
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Estimate the pre-exponential constant for the diffusion coefficient as a part of producing mosfet tr...
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