Aluminum diffuses readily into silicon. for transistors with shallow source-drain regions, annealing frequently causes aluminum to diffuse through the source-drain region and short to the substrate. this problem, called "junction spiking," can be combated through the use of a thin titanium-tungsten (tiw) barrier between the aluminum and silicon. how might such a barrier affect device performance? (hint: read the section on contact resistance in the device analysis lab.)

Air is to be cooled in the evaporator section of a refrigerator by passing it over a bank of 0.8-cm-outer-diameter and 0.4-m-long tubes inside which the refrigerant is evaporating at -20°c. air approaches the tube bank in the normal direction at 0°c and 1 atm with a mean velocity of 4 m/s. the tubes are arranged in-line with longitudinal and transverse pitches of sl- st 1.5 cm. there are 30 rows in the flow direction with 15 tubes in each row. determine (a) the refrigeration capacity of this system and (b) pressure drop across the tube bank. evaluate the air properties at an assumed mean temperature of -5°c and 1 atm. is this a good assumption?

Asingle-geared blanking press has a stroke of 200 mm and a rated capacity of 320 kn. a cam driven ram is assumed to be capable of delivering the full press load at constant force during the last 15 percent of a constant-velocity stroke. the camshaft has an average speed of 90 rev/min and is geared to the flywheel shaft at a 6: 1 ratio. the total work done is to include an allowance of 16 percent for friction a) estimate the maximum energy fluctuation b) find the rim weight for an effective diameter of 1.2 m and a coefficient of speed fluctuation of 0.10

The flow rate of air through a through a pipe is 0.02 m5/s. a pitot static tube is placed in the flow. the radius of the pitot static tube is 1 mm. assuming the flow to be steady and the air to be at 300k, calculate the difference in total and static pressure if the diameter of the pipe is: (a) d 0.1 m d 0.05 m (c) d 0.01 m