(a)calculate the threshold voltage for a n channel si mosfet. thickness of oxide=20nm. relative dielectric constant of oxide=3.9. doping in p body=1e17/cm3. work function of the metal= 4.8 ev. electron affinity of si=4.0 ev. qit=0. eg=1.12 ev.(b) draw y direction thermal equilibrium and normal operating conditions diagrams ( 2 separate diagrams) for the above mosfet.(c)repeat #a for a p channel mosfet. now assume that the work function of the metal is 4.3 ev. doping in n body is 1e17/cm3.(d)repeat #b for the problem whose parameters are specified in #c.(e )repeat #a if the metal gate electrode is replaced by p+ poly si. only one term changes from the solution for #a.

A3-mm-thick panel of aluminum alloy (k 177 w/m-k, c 875 j/kg-k and ? = 2770 kg/m) is finished on both sides with an epoxy coating that must be cured at or above t,-150°c for at least 5 min. the production line for the curing operation involves two steps: (1) heating in a large oven with air at ts,0-175°c and a convection coefficient of h, 40 w/m2. k, and (2) cooling in a large chamber with air at 25°c and a con- vection coefficient of he 10 w/m2.k. the heating portion of the process is conducted over a time interval te which exceeds the ime required to reach 150°c by 5 min (h = r + 300 s). the coating has an emissivity of ? = 0.8, and the temperatures of the oven and chamber walls are 175 and 25°c, respectively. if the panel is placed in the oven at an initial temperature of 25°c and removed from the chamber at a safe-to-touch tempera ture of 37°c, what is the total elapsed time for the two-step curing operation?