For an n-channel mosfet with gate oxide (sio2) thickness of 30 nm, threshold voltage of 0.7 v, z = 30 um, and length of the device is 0.9 μm, calculate the drain current for vg-3 v and vd-0.2 v. assume that the electron channel mobility is 200 cm'/v-sec. what will be the required drain current to drive the mos in saturation region? how the drain current will change if hfo2 with ks 25 will be used as a gate oxide, whereas other mosfet parameters will be kept the same. what did you mention?