MOSFET has the gate length L = 0.6 um, the width W = 10 um, the oxide thickness 4.5 nm and the relative dielectric permittivity 3.9. The electron mobility is 365 cm^2/Vs, the gate-threshold voltage offset V_GT = 3.3 V and the characteristic velocity saturation field Fs = 1.4 e4 V/cm.

a. For the drain voltage corresponding to the onset of saturation, find the channel sheet carrier density ns_dr at the drain end of the channel.
b. Find the saturation current, Isat