Engineering, 03.03.2020 00:07 skye8773
For pure GaAs at300 K, the concentration of electrons in the conduction band is equal to that of holes in the valence band (= 2 x 10⁶/cm³). Now we introduce selenium (Se) impurities at a concentration of 1 x 10¹⁶/cm³ into GaAs. Se is a group VI element sitting on As sites. Assume that all dopants are ionized and e = 1.6 x 10⁻¹⁹ C.
(a) What is the conductivity type (n or p)?
(b) Calculate the electron and hole concentrations.
Answers: 1
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For pure GaAs at300 K, the concentration of electrons in the conduction band is equal to that of hol...
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