Phosphorus atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of P in this silicon material is known to be 5 × 1019 atoms/m3. The predeposition treatment is to be conducted at 950°C for 45 minutes the surface concentration of P is to be maintained at a constant level of 1.5 x 1026 atoms/m3. Drive-in diffusion will be carried out at 1200°C for a period of 2.5 h. For the diffusion of P in Si, values of Qu and Do are 3.40 eV and 1.1 x 104 m2/s, respectively (a) Calculate the value of Qo (b) Determine the value of x, for the drive-in diffusion treatment (c) Also for the drive-in tréatment, compute the position x at which the concentration of P atoms is 1024 m3