Problem 3 (15 points): An MOS capacitor is made from a 200 nm thick layer of silicon dioxide. The work functions of the metal and the semiconductor are the same. After specialized radiation treatment, the oxide layer traps charge with a surface concentration of OT = 4 × 10−9 C/cm2 . Calculate the effect of these trapped charges on the flat band voltage (VFB) of the MOS capacitor if the charge distribution in the oxide depends on the position linearly, starting from 0 C/ cm3 at the metal-oxide surface and increasing to 0.0004 C/ cm3 at the oxidesemiconductor surface. Give your answer in volts.

Amass of m 1.5 kg of steam is contained in a closed rigid container. initially the pressure and temperature of the steam are: p 1.5 mpa and t 240°c (superheated state), respectively. then the temperature drops to t2= 100°c as the result of heat transfer to the surroundings. determine: a) quality of the steam at the end of the process, b) heat transfer with the surroundings. for: p1.5 mpa and t 240°c: enthalpy of superheated vapour is 2900 kj/kg, specific volume of superheated vapour is 0. 1483 m/kg, while for t 100°c: enthalpy of saturated liquid water is 419kj/kg, specific volume of saturated liquid water is 0.001043m/kg, enthalpy of saturated vapour is 2676 kj/kg, specific volume of saturated vapour is 1.672 m/kg and pressure is 0.1 mpa.

For the closed feedwater heater below, feedwater enters state 3 at a pressure of 2000 psia and temperature of 420 °f at a rate of ix10 ibhr. the feedwat extracted steam enters state 1 at a pressure of 1000 psia and enthalpy of 1500 btu/lbm. the extracted er leaves at an enthalpy of 528.7 btu/lbm steam leaves as a saturated liquid. (16) a) determine the mass flow rate of the extraction steam used to heat the feedwater (10) b) determine the terminal temperature difference of the closed feedwater heater

Burgers vector is generally parallel to the dislocation line. a)-true b)-false