An NMOS transistor fabricated in a technology for which k = 400µA/V and V = 0.4V is required to operate with a small as a variable resistor ranging in value from 200Ω to 1kΩ . It is required to use the smallest possible device, as limited by the minimum channel length of this technology ( = 0.18µm ) and the maximum allowed voltage of 1.8 V. a. Specify the range required for the control voltage and the required transistor width W

Agas contained within a piston-cylinder assembly e end nation about same energy states, 1 and 2, where pi 10 bar, v undergoes two processes, a and b, between the sam 0.1 m3, ui-400 kj and p2 1 bar, v2 1.0 m2, u2 200 kj: process a: process from 1 to 2 during which the pressure- volume relation is pv constant process b: constant-volume process from state 1 to a pressure of 2 bar, followed by a linear pressure-volume process to +20 0 state 2 kinetic and potential energy effects can be ignored. for each of the processes a and b, (a) sketch the process on p-v coordinates, (b) evaluate the work, in kj, and (c) evaluate process the heat transfer, in kj