Engineering, 23.07.2020 01:01 liyahheadhigh
A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 .
Compute
(a) Built-in potential Vbi
(b) Depletion region width W, and xp, xn
(c) Maximum electric field at x=0
(d) Electrostatic potential V at x=0
(e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x
Answers: 2
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A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping o...
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