Engineering, 12.08.2020 05:01 angellynn581
Input resistance of a FET is very high due to A) forward-biased junctions have high impedance B) gate-source junction is reverse-biased C) drain-source junction is reverse-biased D) none of the above
Answers: 3
Engineering, 04.07.2019 18:10
The higher the astm grain-size number, the coarser the grain is. a)-true b)-false
Answers: 3
Engineering, 04.07.2019 18:10
A-mn has a cubic structure with a0 0.8931 nm and a density of 7.47 g/cm3. b-mn has a different cubic structure, with a0 0.6326 nm and a density of 7.26 g/cm3. the atomic weight of manganese is 54.938 g/mol and the atomic radius is 0.112 nm. determine the percent volume change that would occur if a-mn transforms to b-mn.
Answers: 2
Engineering, 04.07.2019 18:10
True or false (explain) (110)[111] is a slip system in bcc metals . the {111} family in fcc contains 8 planes. resolved shear stress (rss) in single crystals is just related to the applied stress. critical resolved shear stress (crss) in single crystal metals is direct proportional to the number of defects in the structure
Answers: 2
Engineering, 04.07.2019 19:10
A)-in the process of engineering design, explain the contribution of material selection. b)- explain the procedure of synthesis as is employed in engineering design. c)- is there any relationship between ergonomics and engineering design? explain. d)- safety consideration in engineering design includes human, product and the enviroment . explain how safety will be incorporated into the design?
Answers: 3
Input resistance of a FET is very high due to A) forward-biased junctions have high impedance B) gat...
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