An NMOS transistor is fabricated in a 0.5-μm process having k n = 200 μA/V2 and V A = 20 V/μm of channel length. If L = 1.5 μm and W = 15 μm, find VA and λ. Find the value ofID that results when the device is operated with an overdrive voltage of 0.5 V and VDS = 2 V. Also, find the value of ro at this operating point. If VDS is increased by 1 V, what is the corresponding change in ID?

What precautions should you take to prevent injuries when dealing with heavy loads?

Determine whether or not it is possible to compress air adiabatically from k to 140 kpa and 400 k. what is the entropy change during this process?

Air at a pressure of 1atm and a temperature of 40 c is in parallel flow over the top surface of a flat plate that is heated to a uniform temperature of 120 c. the plate has a length of 0.40m (in the flow direction) and a width of 0.15m. the reynolds number based on the plate length is 50, 000. what is the rate of heat transfer from the plate to the air? if the free stream velocity of the air is doubled and the pressure is increased to 10 atm what is the rate of heat transfer?