Engineering, 02.11.2020 17:00 journeywalker19
Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 m. If a load resistance of RL 10 k is connected to the output, calculate the cutoff frequency.
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Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate the ideal cutoff...
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