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Engineering, 16.11.2020 18:10 lee9724

Consider electron-hole recombination under conditions of strong carrier-pair injection such that the recombination lifetime can be approximated by tau=1/(zeta delta n), delta n is the injection-generated excess carrier concentration and zeta is the recombination parameter of the material. Assume that the source of injection R is set to zero at t = t_0, find an analytic expression for delta n(t), demonstrating that it exhibits power-law rather than exponential behavior.

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