Engineering, 10.06.2021 18:40 dondre54
For a p-type silicon with boron acceptor density NA=1×1016 cm−3,Calculate the temperature at which only half of the acceptors are ionized. The ionization energy of born acceptor in silicon is 0.045 eV. Assume the bandgap is independent of temperature.
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The drive force for diffusion is 7 fick's first law can be used to solve the non-steady state diffusion. a)-true b)-false
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Slip occurs via two partial dislocations because of (a) the shorter path of the partial dislocation lines; (b) the lower energy state through partial dislocations; (c) the charge balance.
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Which of the following refers to refers to how well the control system responds to sudden changes in the system. a)-transient regulation b)- distributed regulation c)-constant regulation d)-steady-state regulation
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Vibration monitoring this technique uses the noise or vibration created by mechanical equipment and in seme cases by plant systems to detemine their actual condtion. a)- true b)- false
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For a p-type silicon with boron acceptor density NA=1×1016 cm−3,Calculate the temperature at which...
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