Asilicon pn junction diode is constructed using n-type silicon in which the fermi level is 170 mev below the conduction band edge and p-type silicon in which the fermi level is 150 mev above the valence band edge.
what are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? (8 points)
what is the value of the built-in voltage? (3 points)
determine the width of the depletion region on both sides of the junction at zero bias. (6 points)
what is the peak electric field in the depletion region at zero bias? where does it occur? (4 points)
sketch the electric field in the space charge region as a function of x. annotate wherever possible (4 points)
when a reverse bias is applied to a diode, the electric field sweeps minority carriers across the junction. what reverse voltage must be applied to the diode to reduce the concentration of minority carriers at the edge of the depletion region by a factor of ten? (3 points extra credit)