Biased sip-n junction a si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of na 1x1015 cm3 on the p-side and a donor concentration of na- 1x10" cmon the n-side. calculate at 300 k (a) the diffusion voltage vd (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 ev. assume that the current is diffusion dominated. the electron and hole mobilities are ln-1500 cm2/(vs) and μ,-450 cm2/(vs), the recombination lifetimes are τη-τp-2.5 ms. do electrons or holes carry most of the current, and why? if you want to double the electron current, what do you need to do?

The answer is as follows in the photo

Answer: a charge of -1.0  × 10⁻⁴ c must be placed  at x = 26 m.the sign of the charge will be the same sign as the  -4.0  µc charge.======electricstatic force between two point charges  is given by    where k is coulomb's constant,  8.99×10⁹  n·m²/c², q₁ and q₂ are the point charges, and r is the distance between the two point charges.assign positive to q₁let q₁ =  6.0 µc, q₂ = -4.0  µc, q₀ represent the charge at the origin, and q₃ represent this new charge to place.the charge at the origin q₀ would experience the following force f₀₁ from q₁, with r = 6.0 m (note that 1  µc = 10⁻⁶ c)    the force from q₂    the force from q₃    the net force on the origin charge, q₀, has to be zero for no electrostatic forcehaving an equation where k and q₀ can be divided out of the equation will allow us to solve for q₃    isolating:     a charge of -1.0  × 10⁻⁴ c must be placed  at x = 26 m.the sign of the charge will be the same as the  -4.0  µc charge

The force is push or pull