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Physics, 13.07.2019 02:30 ritahastie2896

Define the majority carrier concentration in an n-type si semiconductor in terms of the conduction band edge energy ec and the fermi energy e 2 marks find an expression for ee - ep, i. e, the difference between the conduction band edge energy and the fermi energy in terms of the donor concentration np 4 marks determine the concentration of donor impurity atoms that must be added to silicon so that ec ep 0.2 ev 4 marks

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