You are asked to design a 4h-sic p-mosfet, which will be fabricated on the same chip with the n-mosfet of problem 1. the 4h-sic p-mosfet will be used with the device of problem 1 to build a cmos logic gate (see figure below). therefore, both devices should have the same gate oxide material, oxide thickness, and oxide charge density. since the p-mosfet requires n-type region, such region was implanted to produce doping of 1x10 c (a) calculate v (b) (b) if we need saturation current iss 10 ma at vo 5v, what will be the gate width z, if you choose l= 1 μm.

Abird flies directly overhead from where you stand at an altitude of 300.0 m and at a speed horizontal to the ground of 20.0 m/s. the bird has a mass of 2.0 kg. the radius vector to the bird makes an angle \thetaθ with respect to the ground. the radius vector to the bird and its momentum vector lie in the xyxy-plane. what is the bird’s angular momentum about the point where you are standing?

How do you know how many valence electrons an atom has?

Which of the following is a false statement about dispersion forces? view available hint(s) which of the following is a false statement about dispersion forces? dispersion forces are the result of fluctuations in the electron distribution within molecules or atoms. dispersion forces are present in all atoms and molecules. dispersion forces result from the formation of instantaneous dipoles in a molecule or atom. dispersion forces always have a greater magnitude in molecules with a greater molar mass. dispersion force magnitude depends on the amount of surface area available for interactions.