Asilicon wafer is used to attenuate the intensity from a laser emitting at a wavelength of 0.8 µm. if the laser output power is 100 mw what is the wafer thickness required to attenuate the power to 1 mw?

Explanation:

given data:

wavelength of emission =

output power = 100 mW

We can deduce value of obsorption coefficient from the graph obsorption coefficient vs wavelength

for wavelength the obsorption coefficient value is 10^{3}

intensity can be expressed as a function of thickness as following:

putting all value to get thickness

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their mass and volume are dep

when it gains or loses electrons