Physics, 07.10.2019 21:10 pennygillbert
One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration of as in si is 2.5 × 1020 atoms/m3. the predisposition heat treatment is to be conducted at 1000°c for 45 minutes, with a constant surface concentration of 8 × 1026 as atoms/m3. at a drive-in temperature of 1100°c, determine the diffusion time required for a junction depth of 1.2 μm. for this system, values of qd and d0 are 4.10 ev and 2.29 × 10−3 m2/s, respectively.
Answers: 1
Physics, 21.06.2019 23:30
If 21.2 kcals of energy is released by this reaction, how many kj does the reaction release? (1 cal 4.184 j)
Answers: 1
Physics, 22.06.2019 05:30
Imagine that someone pushes one marble toward a motionless marble. would there still be action-reaction forces involved in the collision? how might the marbles’ motions be changed? ?
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Physics, 22.06.2019 14:30
Increasing the pressure on one spot of a fluid will increase the pressure everywhere else in the fluid a. pascals principal b. archimedes' principal c. bernoulli's principal
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Physics, 22.06.2019 14:40
According to valence bond theory, which orbitals overlap in the formation of the bond in hf according to valence bond theory, which orbitals overlap in the formation of the bond in hf 2s on h and 2p on f 1s on h and 2s on f 1s on h and 1p on f 1s on h and 2p on f 1s on h and 3p on f
Answers: 3
One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the backgroun...
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