Consider a photoresist line whose cross-sectional profile has a trapezoidal shape with a sidewall angle θ (near 90º) with respect to the wafer surface. if the resist has vertical and horizontal etch rates rv and rh, respectively, derive an expression for the rate at which the critical dimension (horizontal width) of the resist feature decreases with etch time.

An object is 10. cm from the mirror, its height is 3.0 cm, and the focal length is 2.0 cm. what is the image height? (indicate the object orientation by including the + or - sign with the answer.) hi = cm +1.33 -1.33 +0.75 -0.75

As the distance from a magnet increases, what happens to the magnet force?

3. a worker pushes a 30.5 kg polished stone along a polished table with a force on bonin a straight line for 5.20 s after starting from rest. there is no friction between thestone and the table. at the end of the table. the stone is hooked to a cable with a lengthof 62.0 cm to rotate it to a rough table to store until they can be picked up. the roughtable has a coefficient of static friction 0.702 with the polished stone. remember that 8= 9.80 m/s2a) what is the speed of the stone when it is hooked to the cable? b) what is the tension in the cable while the stone is rotating? (there is still nofriction)c) how much force is needed to make the stone begin sliding from rest on therough table? ius = 0.70262.0 cm30.5 kg20.5 kg6= 0