subject
Physics, 08.01.2020 06:31 gggg79

Hafnium dioxide (hfo2) is a material often used as a high-k dielectric for semiconductor gating applications. the hf 4f photoelectron peak in the xps spectrum of an ultrathin film of hfo2 obtained with an al ka source (a=0.83401 nm) and a spectrometer with a work function of 25.34 ev is measured at a binding energy of 17.56 ev. (h = 6.62607 x 10-34 j·s; c = 2.99792 x 108 m/s; 1 j = 6.2415 x 1018 ev) a) what is the energy, in units of j, of the al ka source? b) what is the kinetic energy, in units of ev, of the measured electron? what is the binding energy telling us? c) if the same sample was analyzed on an xps of identical work function, but with a mg ka source (a=0.98900 nm), what binding energy would be the measured for the same photoelectron? what will be the kinetic energy?

ansver
Answers: 3

Another question on Physics

question
Physics, 22.06.2019 01:40
Lin yao looks at the back of a spoon. how should she describe her reflection? upside down and smaller upside down and larger right-side up and smaller right-side up and larger
Answers: 1
question
Physics, 22.06.2019 12:20
Which lists the pairs of plates in order from least to greatest in terms of the work done to move the electron?
Answers: 2
question
Physics, 22.06.2019 14:00
If element x has 99 protons how many electrons does it have
Answers: 1
question
Physics, 22.06.2019 18:00
At the negative terminal of the battery the electron has electric potential energy. what happens to this energy as the electron jumps from the negative to the positive terminal?
Answers: 1
You know the right answer?
Hafnium dioxide (hfo2) is a material often used as a high-k dielectric for semiconductor gating appl...
Questions
Questions on the website: 13722359