1. A silicon BJT is connected as shown in Fig 1, where RC = 3.6 k 2. VBE = 0.8 V. (10%) (a) Predict Ic and specify Rp to establish Vce at 5 V.(5%)
(b) The BJT is said to be in forward-reverse bias. Explain what is meant by this. (5%)
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The circuit is missing attached below is the required circuit

answer :

a) Ic = 1.944 mA

  Rp = 288.66 kΩ

b) The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased

Explanation:

Rc = 3.6 kΩ

VBE = 0.8 v

1) predict Ic and specify Rp to establish Vce at 5 V

we will apply Kirchhoff's voltage law to resolve this

solution attached below

b ) The BJT is said to be in Forward reverse bias because The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased

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